Details
BUY P80NF12 https://www.utsource.net/itm/p/12606973.html
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | 12 | V | Maximum drain-source voltage | |
| Gate-Source Voltage | VGS | -12 | 12 | V | Maximum gate-source voltage | |
| Continuous Drain Current | IDS | 80 | mA | Continuous drain current at Tc = 25掳C | ||
| Power Dissipation | PD | 120 | mW | Maximum power dissipation | ||
| Junction Temperature | TJ | -40 | 125 | 掳C | Operating junction temperature range | |
| Storage Temperature | TSTG | -55 | 150 | 掳C | Storage temperature range |
Instructions for Use:
- Handling Precautions: The P80NF12 is sensitive to electrostatic discharge (ESD). Use proper ESD protection practices when handling the device.
- Mounting: Ensure that the device is mounted in a way that provides adequate heat dissipation, especially if operating near maximum power dissipation.
- Voltage Limits: Do not exceed the maximum ratings for drain-source voltage (VDS) and gate-source voltage (VGS) to prevent damage to the device.
- Current Handling: Monitor the continuous drain current (IDS) to ensure it does not exceed the rated value under any operating conditions.
- Temperature Monitoring: Keep the junction temperature (TJ) within the specified range to avoid thermal damage. Consider derating the power dissipation if operating in high ambient temperatures.
- Storage Conditions: Store the device in an environment where the temperature stays within the storage temperature range (TSTG) to ensure long-term reliability.
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