P80NF12

P80NF12


Specifications
Details

BUY P80NF12 https://www.utsource.net/itm/p/12606973.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS -12 12 V Maximum drain-source voltage
Gate-Source Voltage VGS -12 12 V Maximum gate-source voltage
Continuous Drain Current IDS 80 mA Continuous drain current at Tc = 25掳C
Power Dissipation PD 120 mW Maximum power dissipation
Junction Temperature TJ -40 125 掳C Operating junction temperature range
Storage Temperature TSTG -55 150 掳C Storage temperature range

Instructions for Use:

  1. Handling Precautions: The P80NF12 is sensitive to electrostatic discharge (ESD). Use proper ESD protection practices when handling the device.
  2. Mounting: Ensure that the device is mounted in a way that provides adequate heat dissipation, especially if operating near maximum power dissipation.
  3. Voltage Limits: Do not exceed the maximum ratings for drain-source voltage (VDS) and gate-source voltage (VGS) to prevent damage to the device.
  4. Current Handling: Monitor the continuous drain current (IDS) to ensure it does not exceed the rated value under any operating conditions.
  5. Temperature Monitoring: Keep the junction temperature (TJ) within the specified range to avoid thermal damage. Consider derating the power dissipation if operating in high ambient temperatures.
  6. Storage Conditions: Store the device in an environment where the temperature stays within the storage temperature range (TSTG) to ensure long-term reliability.
(For reference only)

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