Details

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BUY JCS75N75CF https://www.utsource.net/itm/p/12606990.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	75	-	V	Maximum voltage between drain and source with the gate open
Gate-Source Voltage	VGS	-10	-	10	V	Maximum voltage between gate and source
Continuous Drain Current	ID	-	75	-	A	Maximum continuous current through the drain to source
Pulse Drain Current (tp = 10 渭s, IGM = 100 mA)	IDm	-	225	-	A	Maximum pulse current through the drain to source
Power Dissipation	PTOT	-	300	-	W	Maximum total power dissipation
Junction Temperature	TJ	-40	-	150	掳C	Operating junction temperature range
Storage Temperature	TSTG	-65	-	150	掳C	Storage temperature range
Thermal Resistance, Junction to Case	R胃JC	-	0.5	-	掳C/W	Thermal resistance from junction to case
Gate Charge	QG	-	180	-	nC	Total gate charge
Input Capacitance	Ciss	-	1900	-	pF	Input capacitance at VDS = 15 V, VGS = 0 V
Output Capacitance	Coss	-	180	-	pF	Output capacitance at VDS = 15 V, VGS = 0 V
Reverse Transfer Capacitance	Crss	-	120	-	pF	Reverse transfer capacitance at VDS = 15 V, VGS = 0 V

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the maximum power dissipation.
   • Use thermal paste to enhance thermal conductivity between the device and the heatsink.

2. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits to avoid damaging the device.
   • Ensure the drain-source voltage (V_DS) does not exceed the maximum rating.

3. Current Handling:

   • Do not exceed the continuous drain current (I_D) or pulse drain current (I_Dm) ratings.
   • For high current applications, consider parallel operation of multiple devices.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it remains within the operating range.
   • Use appropriate cooling methods such as forced air or liquid cooling if necessary.

5. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range (T_STG).

6. Handling:

   • Handle the device with care to avoid mechanical stress.
   • Use ESD (Electrostatic Discharge) protection measures to prevent damage during handling and installation.

7. Testing:

   • Use appropriate test equipment and procedures to verify the device parameters.
   • Refer to the datasheet for specific test conditions and methods.

(For reference only)