Details

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BUY IRF-3415 https://www.utsource.net/itm/p/12607026.html

Below is the parameter table and instructions for the IRF-3415 MOSFET:

IRF-3415 MOSFET Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	VDSS	-	-	55	V	-
Gate-Source Voltage	VGSS	-10	-	10	V	-
Continuous Drain Current	ID	-	16	-	A	TC = 25掳C
Pulsed Drain Current	IDpeak	-	50	-	A	tp = 10 渭s, IG = 0 A, TC = 25掳C
Gate Charge	QG	-	89	-	nC	VGS = 10 V
Input Capacitance	Ciss	-	2100	-	pF	VDS = 25 V, f = 1 MHz
Output Capacitance	Coss	-	1100	-	pF	VDS = 25 V, f = 1 MHz
Rise Time	tr	-	48	-	ns	VDS = 40 V, ID = 8 A, RG = 10 惟
Fall Time	tf	-	38	-	ns	VDS = 40 V, ID = 8 A, RG = 10 惟
Thermal Resistance (Junction to Case)	R胃JC	-	0.5	-	掳C/W	-
Thermal Resistance (Junction to Ambient)	R胃JA	-	62.5	-	掳C/W	-
Maximum Junction Temperature	TJmax	-	-	175	掳C	-

IRF-3415 MOSFET Instructions

1. Handling Precautions:

   • ESD Protection: The IRF-3415 is sensitive to electrostatic discharge (ESD). Always use proper ESD protection when handling the device.
   • Temperature: Ensure that the operating temperature does not exceed the maximum junction temperature (T_Jmax) of 175掳C.

2. Mounting:

   • Heat Sinking: Use appropriate heat sinks to manage the thermal resistance and ensure that the junction temperature remains within safe limits.
   • Torque: Apply the recommended torque to the mounting screws to avoid mechanical stress on the device.

3. Biasing:

   • Gate-Source Voltage (V_GS): Ensure that the gate-source voltage is within the specified range of -10 V to +10 V to prevent damage to the gate oxide.
   • Drain-Source Voltage (V_DS): Do not exceed the maximum drain-source voltage of 55 V.

4. Current Handling:

   • Continuous Drain Current (I_D): The continuous drain current should not exceed 16 A at a case temperature of 25掳C.
   • Pulsed Drain Current (I_Dpeak): For pulsed applications, the peak drain current can be up to 50 A for a pulse duration of 10 渭s.

5. Switching Characteristics:

   • Rise Time (t_r): The rise time is typically 48 ns under standard test conditions.
   • Fall Time (t_f): The fall time is typically 38 ns under standard test conditions.

6. Capacitance:

   • Input Capacitance (C_iss): The input capacitance is typically 2100 pF at V_DS = 25 V.
   • Output Capacitance (C_oss): The output capacitance is typically 1100 pF at V_DS = 25 V.

7. Storage:

   • Humidity: Store the device in a dry environment to prevent moisture damage.
   • Temperature: Store the device at temperatures between -55掳C and 150掳C.

By following these parameters and instructions, you can ensure reliable operation and longevity of the IRF-3415 MOSFET.

(For reference only)