Details
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| Parameter | Description |
|---|---|
| Part Number | FTR-MYAA024D |
| Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Configuration | N-Channel |
| VDS (Max Drain-Source Voltage) | 卤60V |
| RDS(on) (On-Resistance) | 4.5 m惟 @ VGS=10V, ID=24A |
| ID (Continuous Drain Current) | 24A @ TC=25掳C |
| Power Dissipation (PD) | 80W @ TC=25掳C |
| Total Gate Charge (Qg) | 67 nC |
| Input Capacitance (Ciss) | 2930 pF |
| Output Capacitance (Coss) | 340 pF |
| Reverse Transfer Capacitance (Crss) | 220 pF |
| Operating Temperature Range (TJ) | -55掳C to +175掳C |
| Package Type | TO-220 |
| RoHS Compliant | Yes |
Instructions:
- Installation: Ensure that the device is mounted on a heatsink if operating near its maximum current or power dissipation limits.
- Handling: Use appropriate ESD (Electrostatic Discharge) precautions when handling the component to prevent damage.
- Soldering: Follow standard soldering practices for TO-220 packages. Preheat components and ensure proper cooling after soldering.
- Testing: Before deploying in final applications, test the device under conditions similar to those it will experience in operation.
- Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.
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