Details

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BUY BTB16-800 https://www.utsource.net/itm/p/12607055.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Repetitive Peak Off-State Voltage	VDRM	-	800	-	V	Voltage at which the device is non-conductive in off-state
Repetitive Peak Reverse Voltage	VRSM	-	800	-	V	Maximum reverse voltage that can be applied continuously
Non-Repetitive Peak Off-State Voltage	VDRM(NR)	-	1200	-	V	Non-repetitive peak off-state voltage
On-State Current (at Tj = 25掳C)	IT(RMS)	-	16	-	A	RMS current through the device in on-state at 25掳C junction temperature
On-State Current (at Tj = 70掳C)	IT(RMS)	-	13.6	-	A	RMS current through the device in on-state at 70掳C junction temperature
Holding Current	IH	5	-	-	mA	Minimum current required to maintain conduction
Gate Trigger Voltage	VGT	1.5	-	4	V	Voltage required at gate to trigger the device
Gate Trigger Current	IG(T)	10	-	50	mA	Current required at gate to trigger the device
Power Dissipation	PD	-	-	110	W	Maximum power dissipation
Junction Temperature	TJ	-55	-	125	掳C	Operating temperature range for the junction
Storage Temperature	TSTG	-55	-	150	掳C	Temperature range for storage

Instructions:

1. Installation: Ensure the BTB16-800 is installed in a circuit where its maximum ratings are not exceeded. Pay special attention to the repetitive peak off-state voltage and on-state current ratings.
2. Triggering: To turn on the device, apply a gate trigger voltage between 1.5V and 4V with a gate trigger current of at least 10mA but not exceeding 50mA.
3. Heat Management: Given the power dissipation capability of up to 110W, ensure adequate heat sinking or cooling to manage the junction temperature within the operating range of -55掳C to 125掳C.
4. Storage and Handling: Store the device in an environment where the temperature does not exceed 150掳C and does not drop below -55掳C.
5. Safety Precautions: Always handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.

(For reference only)