Details

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BUY IRFB31N20D. https://www.utsource.net/itm/p/12607059.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	VDS		-	650	-	V
Gate-Source Voltage	VGS		-20	0	20	V
Continuous Drain Current (TC = 25掳C)	ID(25掳C)	VDS = 25V, VGS = 10V	-	31	-	A
Continuous Drain Current (TC = 100掳C)	ID(100掳C)	VDS = 25V, VGS = 10V	-	24	-	A
Pulse Drain Current (TC = 25掳C, tp = 10ms, Duty Cycle = 1%)	ID(pulsed)	VDS = 25V, VGS = 10V	-	93	-	A
Total Power Dissipation (TC = 25掳C)	PTOT(25掳C)		-	170	-	W
Total Power Dissipation (TC = 100掳C)	PTOT(100掳C)		-	110	-	W
Junction Temperature	TJ		-	-	150	掳C
Storage Temperature Range	TSTG		-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC		-	0.5	-	掳C/W
Drain-Source On-State Resistance (TJ = 25掳C)	RDS(on)(25掳C)	VGS = 10V, ID = 10A	-	0.028	-	惟
Drain-Source On-State Resistance (TJ = 100掳C)	RDS(on)(100掳C)	VGS = 10V, ID = 10A	-	0.047	-	惟
Gate Charge	QG	VGS = 15V, IG = 1A	-	60	-	nC
Input Capacitance	Ciss	VDS = 25V, f = 1MHz	-	1350	-	pF
Output Capacitance	Coss	VDS = 25V, f = 1MHz	-	110	-	pF
Reverse Transfer Capacitance	Crss	VDS = 25V, f = 1MHz	-	32	-	pF

Instructions for Use:

1. Handling Precautions:

   • The IRFB31N20D is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection when handling the device.
   • Avoid exceeding the maximum ratings specified in the table to prevent damage.

2. Mounting:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within safe limits.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and improve performance.

3. Gate Drive:

   • Use a gate drive circuit that can provide sufficient current to charge and discharge the gate capacitance quickly.
   • Ensure the gate voltage (V_GS) is within the specified range to avoid overvoltage or undervoltage conditions.

4. Operating Conditions:

   • Monitor the drain current (I_D) and power dissipation (P_TOT) to ensure they do not exceed the continuous ratings.
   • For pulsed applications, ensure the pulse duration and duty cycle are within the specified limits.

5. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Follow recommended storage temperature ranges to avoid degradation.

6. Testing:

   • Use the test conditions provided in the table for accurate measurements and characterization.
   • Refer to the datasheet for detailed testing procedures and application notes.

(For reference only)