Details

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BUY STP45N10F7 https://www.utsource.net/itm/p/12607083.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	-	-	100	V
Gate-Source Voltage	VGS	-	-	-	卤20	V
Continuous Drain Current	ID	TC = 25掳C	-	-	45	A
Continuous Drain Current	ID	TC = 100掳C	-	-	35	A
Pulse Drain Current	ID(p)	tp = 10 ms, TC = 25掳C	-	-	180	A
Power Dissipation	PTOT	TC = 25掳C	-	-	180	W
Junction Temperature	TJ	-	-	-	175	掳C
Storage Temperature Range	TSTG	-	-65	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	-	0.5	掳C/W
Total Gate Charge	QG	VGS = 10V, ID = 45A	-	90	-	nC
Input Capacitance	Ciss	VDS = 10V, f = 1 MHz	-	1500	-	pF
Output Capacitance	Coss	VDS = 10V, f = 1 MHz	-	220	-	pF
Reverse Transfer Capacitance	Crss	VDS = 10V, VGS = 0V, ID = 1 mA	-	250	-	pF

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use appropriate gate drive circuits to ensure reliable operation.

3. Thermal Management:

   • Monitor junction temperature to prevent overheating.
   • Use thermal paste between the device and heatsink for better thermal conductivity.

4. Operational Parameters:

   • Do not exceed the maximum ratings for V_DS, V_GS, I_D, and power dissipation.
   • Ensure the operating temperature is within the specified range.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.
   • Follow ESD (Electrostatic Discharge) precautions during handling and storage.

6. Testing:

   • Use recommended test conditions for accurate parameter measurements.
   • Refer to the datasheet for detailed testing procedures and additional information.

(For reference only)