Details

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BUY IRFP240 https://www.utsource.net/itm/p/12607132.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	200	-	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	7	-	A
Pulse Drain Current	IDpeak	-	35	-	A
Power Dissipation	PTOT	-	110	-	W
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	0.58	-	掳C/W
Total Gate Charge	QG	-	69	-	nC
Input Capacitance	Ciss	-	1750	-	pF
Output Capacitance	Coss	-	380	-	pF
Reverse Transfer Capacitance	Crss	-	220	-	pF

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid damage to the leads and the semiconductor junction.

2. Biasing:

   • Apply a gate-source voltage (V_GS) within the specified range to control the drain current (I_D).
   • Avoid exceeding the maximum gate-source voltage to prevent gate damage.

3. Operating Conditions:

   • Do not exceed the maximum drain-source voltage (V_DS) to prevent breakdown.
   • Ensure the continuous drain current (I_D) does not exceed the rated value to avoid overheating.
   • For pulse applications, ensure the peak drain current (I_Dpeak) is within limits to prevent thermal stress.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it stays within the safe operating range.
   • Use appropriate cooling methods such as heatsinks or forced air cooling to maintain optimal temperature.

5. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range (T_STG).

6. Electrostatic Discharge (ESD) Protection:

   • Handle the device with ESD protection measures to prevent damage from static electricity.

7. Testing:

   • Use appropriate test equipment and procedures to verify the device parameters and functionality without exceeding the maximum ratings.

(For reference only)