9435P

9435P


Specifications
SKU
12607145
Details

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Parameter Description Value
Part Number Component Identifier 9435P
Type Device Type Phototransistor
Package Housing Type TO-46
Collector-Emitter Voltage (VCE) Maximum Voltage Between Collector and Emitter 30 V
Emitter-Base Voltage (VEB) Maximum Voltage Between Emitter and Base 5 V
Collector Current (IC) Maximum Continuous Collector Current 50 mA
Power Dissipation (PTOT) Maximum Power Dissipation 100 mW
Photocurrent (IF) Typical Photocurrent at 1000 lx, 550 nm 100 渭A
Dark Current (ID) Maximum Dark Current at 25掳C 10 nA
Rise Time (tr) Time to Rise from 10% to 90% of Output 2 渭s
Fall Time (tf) Time to Fall from 90% to 10% of Output 2 渭s
Operating Temperature Range Temperature Range for Normal Operation -40掳C to +85掳C
Storage Temperature Range Temperature Range for Storage -40掳C to +125掳C

Instructions for Use:

  1. Handling and Storage:

    • Handle the 9435P with care to avoid mechanical damage.
    • Store in a dry, cool place within the specified storage temperature range.
  2. Mounting:

    • Ensure proper alignment and secure mounting to prevent mechanical stress.
    • Use appropriate heat sinks if operating near the maximum power dissipation.
  3. Electrical Connections:

    • Connect the collector to the positive supply and the emitter to the load or ground.
    • Ensure that the applied voltages and currents do not exceed the maximum ratings.
  4. Optical Considerations:

    • The 9435P is sensitive to light, particularly in the visible spectrum (around 550 nm).
    • Shield the device from unwanted light sources to avoid false triggering.
  5. Testing:

    • Test the device under controlled conditions to ensure it meets the specified parameters.
    • Use a light source with known intensity and wavelength for accurate testing.
  6. Safety:

    • Follow all relevant safety guidelines when handling and testing the device.
    • Avoid exposing the device to excessive temperatures or voltages to prevent damage.
(For reference only)

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