IGCM20F60GA/20A600V

IGCM20F60GA/20A600V


Specifications
SKU
12607152
Details

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Parameter Symbol Min Typ Max Unit Conditions
Rated Voltage VDS - 600 - V -
Continuous Drain Current (TC=25掳C) ID - 20 - A -
Continuous Drain Current (TC=100掳C) ID - 14 - A -
Pulse Drain Current (10ms, 1% Duty Cycle) ID(p) - 80 - A -
Gate-Source Voltage VGS -20 - 20 V -
Gate Threshold Voltage VGS(th) 2.0 3.5 4.5 V ID=250渭A, TJ=25掳C
On-State Resistance at 25掳C RDS(on) - 0.18 - VGS=10V, ID=20A
On-State Resistance at 100掳C RDS(on) - 0.25 - VGS=10V, ID=14A
Total Gate Charge QG - 70 - nC -
Input Capacitance Ciss - 1500 - pF VDS=600V, f=1MHz
Output Capacitance Coss - 220 - pF VDS=600V, f=1MHz
Reverse Transfer Capacitance Crss - 200 - pF VDS=600V, f=1MHz
Junction-to-Case Thermal Resistance R胃JC - 0.5 - 掳C/W -
Junction-to-Ambient Thermal Resistance R胃JA - 62 - 掳C/W -
Maximum Junction Temperature TJ(max) - - 175 掳C -
Storage Temperature Range Tstg -55 - 150 掳C -

Instructions for Use:

  1. Operating Conditions:

    • Ensure that the drain-source voltage ( V_ ) does not exceed 600V.
    • The continuous drain current ( I_D ) should not exceed 20A at 25掳C and 14A at 100掳C.
    • The pulse drain current ( I_D(p) ) can reach up to 80A for a 10ms duration with a 1% duty cycle.
  2. Gate Drive:

    • The gate-source voltage ( V_ ) should be within the range of -20V to +20V.
    • The gate threshold voltage ( V_{GS(th)} ) is typically between 2.0V and 4.5V at 25掳C.
  3. Thermal Management:

    • The junction-to-case thermal resistance ( R_{theta JC} ) is 0.5掳C/W, and the junction-to-ambient thermal resistance ( R_{theta JA} ) is 62掳C/W.
    • The maximum junction temperature ( T_J ) should not exceed 175掳C.
    • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within safe limits.
  4. Capacitance Considerations:

    • The input capacitance ( C_ ) is 1500pF, the output capacitance ( C_ ) is 220pF, and the reverse transfer capacitance ( C_ ) is 200pF. These values are important for designing the gate drive circuit and calculating switching losses.
  5. Storage and Handling:

    • Store the device in a dry, cool place within the storage temperature range of -55掳C to 150掳C.
    • Handle the device with care to avoid static discharge, which can damage the sensitive components.
  6. Mounting:

    • Ensure that the device is securely mounted to the PCB or heatsink to prevent mechanical stress and ensure good thermal contact.
    • Follow the recommended soldering profile and avoid excessive heat during soldering to prevent damage to the device.
(For reference only)

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