Details
BUY AS4C1M16E5-60TC https://www.utsource.net/itm/p/12607227.html
| Parameter | Description | Value |
|---|---|---|
| Device Type | Synchronous DRAM | 128 Mbit (16M x 8) |
| Organization | Internal Organization | 16M x 8 |
| Supply Voltage (Vcc) | Core Supply Voltage | 3.3V 卤 0.3V |
| I/O Voltage (Vccq) | I/O Supply Voltage | 3.3V 卤 0.3V |
| Operating Temperature | Commercial Temperature Range | 0掳C to 70掳C |
| Access Time (tAC) | Access Time from Clock Edge | 6.0 ns max |
| Cycle Time (tRC) | Row Cycle Time | 60 ns min |
| Row Precharge Time (tRP) | Row Precharge Time | 15 ns min |
| Row Active to Row Active (tRRD) | Row Active to Row Active Delay | 15 ns min |
| Write Recovery Time (tWR) | Write Recovery Time | 15 ns min |
| CAS Latency (CL) | CAS Latency | 3, 2 (Burst Length) |
| Burst Length (BL) | Burst Length | 4, 8 |
| Package | Package Type | 48-pin TSOP II |
| Pin Pitch | Pin Pitch | 0.8 mm |
| Dimensions | Package Dimensions (L x W x H) | 14.0 mm x 9.7 mm x 1.2 mm |
| RoHS Compliance | RoHS Compliant | Yes |
Instructions for Use
Power Supply:
- Ensure that the core supply voltage (Vcc) and I/O supply voltage (Vccq) are both set to 3.3V 卤 0.3V.
- Use appropriate decoupling capacitors near the power pins to minimize noise.
Clock Signal:
- Provide a stable clock signal to the CLK pin. The access time (tAC) is measured from the rising edge of the clock signal.
Address and Control Signals:
- Apply address signals (A0-A12) and control signals (CS#, RAS#, CAS#, WE#) as per the timing specifications.
- Ensure that the row precharge time (tRP) and row active to row active delay (tRRD) are respected to avoid data corruption.
Data Input/Output:
- Data input/output (DQ0-DQ7) should be synchronized with the clock signal.
- Use the write enable (WE#) signal to control data writes.
Burst Mode:
- Set the burst length (BL) to 4 or 8 as required by your application.
- Configure the CAS latency (CL) to 3 or 2 depending on the burst length.
Thermal Management:
- Ensure adequate cooling to maintain the operating temperature within the specified range (0掳C to 70掳C).
Handling:
- Handle the device with care to avoid static damage. Use ESD protection measures during handling and installation.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
For detailed timing diagrams and additional information, refer to the datasheet provided by the manufacturer.
(For reference only)View more about AS4C1M16E5-60TC on main site
