AS4C1M16E5-60TC

AS4C1M16E5-60TC


Specifications
SKU
12607227
Details

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Parameter Description Value
Device Type Synchronous DRAM 128 Mbit (16M x 8)
Organization Internal Organization 16M x 8
Supply Voltage (Vcc) Core Supply Voltage 3.3V 卤 0.3V
I/O Voltage (Vccq) I/O Supply Voltage 3.3V 卤 0.3V
Operating Temperature Commercial Temperature Range 0掳C to 70掳C
Access Time (tAC) Access Time from Clock Edge 6.0 ns max
Cycle Time (tRC) Row Cycle Time 60 ns min
Row Precharge Time (tRP) Row Precharge Time 15 ns min
Row Active to Row Active (tRRD) Row Active to Row Active Delay 15 ns min
Write Recovery Time (tWR) Write Recovery Time 15 ns min
CAS Latency (CL) CAS Latency 3, 2 (Burst Length)
Burst Length (BL) Burst Length 4, 8
Package Package Type 48-pin TSOP II
Pin Pitch Pin Pitch 0.8 mm
Dimensions Package Dimensions (L x W x H) 14.0 mm x 9.7 mm x 1.2 mm
RoHS Compliance RoHS Compliant Yes

Instructions for Use

  1. Power Supply:

    • Ensure that the core supply voltage (Vcc) and I/O supply voltage (Vccq) are both set to 3.3V 卤 0.3V.
    • Use appropriate decoupling capacitors near the power pins to minimize noise.
  2. Clock Signal:

    • Provide a stable clock signal to the CLK pin. The access time (tAC) is measured from the rising edge of the clock signal.
  3. Address and Control Signals:

    • Apply address signals (A0-A12) and control signals (CS#, RAS#, CAS#, WE#) as per the timing specifications.
    • Ensure that the row precharge time (tRP) and row active to row active delay (tRRD) are respected to avoid data corruption.
  4. Data Input/Output:

    • Data input/output (DQ0-DQ7) should be synchronized with the clock signal.
    • Use the write enable (WE#) signal to control data writes.
  5. Burst Mode:

    • Set the burst length (BL) to 4 or 8 as required by your application.
    • Configure the CAS latency (CL) to 3 or 2 depending on the burst length.
  6. Thermal Management:

    • Ensure adequate cooling to maintain the operating temperature within the specified range (0掳C to 70掳C).
  7. Handling:

    • Handle the device with care to avoid static damage. Use ESD protection measures during handling and installation.
  8. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.

For detailed timing diagrams and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)

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