Details

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BUY 2SB175 https://www.utsource.net/itm/p/12607242.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0.1 mA	-	-	60	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE = 5.0 mA	-	-	7	V
Collector Current	IC	VCE = 30V, T = 25掳C	-	0.1	0.5	A
DC Current Gain	hFE	IC = 50 mA, VCE = 5V	25	100	400	-
Transition Frequency	fT	IC = 1 mA, VCE = 3V	-	150	-	MHz
Storage Temperature Range	Tstg	-	-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the transistor is securely mounted to avoid mechanical stress on the leads.
2. Heat Dissipation: For high current applications, use a suitable heat sink to maintain operating temperatures within safe limits.
3. Biasing: Proper biasing is crucial to ensure stable operation and prevent thermal runaway.
4. Protection: Incorporate protection diodes or other protective circuits if the application involves inductive loads.
5. Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
6. Storage: Store in a cool, dry place away from direct sunlight and sources of heat.

For detailed specifications and more information, refer to the official datasheet provided by the manufacturer.

(For reference only)