Details

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BUY IPD50N10S3L https://www.utsource.net/itm/p/12607255.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	100	-	V	Maximum voltage between drain and source with gate open
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage between gate and source
Continuous Drain Current	ID	-	50	-	A	Maximum continuous current through the drain
Pulse Drain Current	ID(pulse)	-	150	-	A	Maximum pulse current through the drain (tp = 10 渭s, ID(on) = 1/3 ID)
Power Dissipation	PTOT	-	-	275	W	Maximum total power dissipation
Junction Temperature	TJ	-	-	175	掳C	Maximum junction temperature
Storage Temperature	TSTG	-65	-	150	掳C	Operating temperature range for storage
Thermal Resistance, Junction to Case	RthJC	-	0.45	-	K/W	Thermal resistance from junction to case
On-State Resistance	RDS(on)	-	3.5	-	m惟	On-state resistance at VGS = 10 V, ID = 25 A
Input Capacitance	Ciss	-	1900	-	pF	Input capacitance at VDS = 100 V, VGS = 0 V
Output Capacitance	Coss	-	450	-	pF	Output capacitance at VDS = 100 V, VGS = 0 V
Reverse Transfer Capacitance	Crss	-	450	-	pF	Reverse transfer capacitance at VDS = 100 V, VGS = 0 V

Instructions for Use:

1. Voltage Handling:

   • Ensure that the drain-source voltage (V_DS) does not exceed 100 V.
   • The gate-source voltage (V_GS) should be kept within 卤20 V.

2. Current Handling:

   • The continuous drain current (I_D) should not exceed 50 A.
   • For pulse conditions, the peak drain current (I_D(pulse)) can go up to 150 A for short durations (t_p = 10 渭s).

3. Power Dissipation:

   • The maximum total power dissipation (P_TOT) is 275 W. Ensure adequate heat sinking to manage this.

4. Temperature Management:

   • The junction temperature (T_J) should not exceed 175掳C.
   • Store the device within the temperature range of -65掳C to 150掳C.

5. Thermal Considerations:

   • The thermal resistance from the junction to the case (R_thJC) is 0.45 K/W. Use appropriate cooling methods to maintain the junction temperature within safe limits.

6. Capacitance:

   • Be aware of the input (C_iss), output (C_oss), and reverse transfer (C_rss) capacitances when designing circuits to avoid unwanted oscillations or switching losses.

7. Handling Precautions:

   • Handle the device with care to avoid static damage. Use ESD protection measures.
   • Follow recommended soldering profiles to prevent thermal stress during assembly.

8. Mounting:

   • Ensure proper mounting and alignment to maximize heat dissipation and mechanical stability.

By adhering to these parameters and instructions, you can ensure reliable operation and longevity of the IPD50N10S3L MOSFET.

(For reference only)