Details

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BUY 2N6073BG https://www.utsource.net/itm/p/12607281.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Emitter-Collector Voltage	VECE	-	-	80	V
Collector-Base Voltage	VCBO	-	-	80	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	15	A
DC Current Gain	hFE	20	60	200	-
Transition Frequency	fT	-	4	-	MHz
Power Dissipation	PD	-	-	125	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted in a way that allows for proper heat dissipation, especially when operating near its maximum power dissipation limit.
2. Biasing: Carefully set up the biasing circuit to operate within the specified current and voltage limits to avoid damage.
3. Handling: Use appropriate anti-static measures during handling to prevent damage from electrostatic discharge (ESD).
4. Derating: For continuous operation, derate the power dissipation linearly above +25掳C junction temperature.
5. Testing: When testing the device, ensure all parameters are within the specified limits to avoid premature failure.
6. Storage: Store in a dry environment within the specified storage temperature range to maintain reliability.

(For reference only)