Details

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BUY 2SA1535A-R https://www.utsource.net/itm/p/12607289.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0			60	V
Emitter-Collector Voltage	VECE	IE = 0			60	V
Base-Emitter Voltage	VBE	IC = -150mA, IE = 0	-7			V
Collector Current	IC	VCE = -30V			-2	A
Base Current	IB	VCE = -30V, IC = -150mA		-7.5		mA
Power Dissipation	PD	Ta = 25掳C			625	mW
Junction Temperature	Tj				150	掳C
Storage Temperature	Tstg		-55		150	掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted in a way that allows for proper heat dissipation if operating near its maximum power dissipation.
2. Biasing: Carefully set the base current to avoid exceeding the maximum collector current and power dissipation limits.
3. Operating Environment: Keep the ambient temperature within the specified storage temperature range to ensure reliable operation.
4. Electrical Stress: Avoid subjecting the transistor to voltages or currents beyond the specified maximum ratings to prevent damage.
5. Handling Precautions: Handle with care to avoid physical damage to the leads and body of the component. Use appropriate anti-static precautions during handling.

(For reference only)