Details

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Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE(max)	-	-	600	V	-
Collector Current	IC(max)	-	-	50	A	Pulse, tp = 10 渭s
Power Dissipation	PT(max)	-	-	1250	W	Case Temp. TC = 25掳C
Junction Temperature	TJ(op)	-	-	150	掳C	-
Storage Temperature	TSTG	-40	-	150	掳C	-
Gate Emitter Voltage	VGE(th)	3.5	5	7	V	IG = 1 mA
Turn-On Time	ton	-	0.15	0.3	渭s	IC = 25 A, VGE = 15 V
Turn-Off Time	toff	-	0.15	0.3	渭s	IC = 25 A, VGE = 15 V
Total Switching Time	td	-	0.3	0.6	渭s	IC = 25 A, VGE = 15 V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Handle with care to avoid damage to the gate terminal, which is sensitive to electrostatic discharge (ESD).

2. Biasing and Drive:

   • Apply a sufficient gate-emitter voltage (V_GE) to ensure reliable turn-on.
   • Use a gate resistor to limit the current and protect the gate from overvoltage.

3. Thermal Management:

   • Monitor the case temperature to prevent overheating, especially under continuous high-power operation.
   • Consider forced air cooling or liquid cooling for high-power applications.

4. Pulse Operation:

   • For pulse applications, ensure that the pulse duration does not exceed the maximum allowable time to avoid thermal runaway.

5. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Avoid exposure to extreme temperatures outside the storage range.

6. Testing:

   • Use appropriate test equipment and procedures to avoid damaging the device during testing.
   • Refer to the datasheet for specific test conditions and methods.

(For reference only)