Details

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BUY 2SJ174 https://www.utsource.net/itm/p/12607314.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCEO	-	-	800	V
Emitter-Collector Voltage	VECS	-	-	800	V
Collector-Base Voltage	VCBO	-	-	900	V
Base-Emitter Voltage	VBE	-	2.5	3.5	V
Continuous Collector Current	IC	-	-	15	A
Continuous Emitter Current	IE	-	-	15	A
Power Dissipation	PT	-	-	180	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	1.5	-	MHz

Instructions for Use:

1. Mounting: Ensure proper heat sinking to maintain the junction temperature within the specified range.
2. Biasing: Use appropriate biasing circuits to prevent the transistor from operating outside its safe operating area (SOA).
3. Handling: Handle the device with care to avoid static damage. Use proper ESD protection.
4. Storage: Store in a dry place within the specified storage temperature range.
5. Testing: When testing, ensure that all voltages and currents are within the maximum ratings to avoid damaging the device.
6. Soldering: Follow recommended soldering profiles to avoid thermal shock and potential damage to the device.

(For reference only)