Details

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BUY 2SB1317 https://www.utsource.net/itm/p/12607328.html

Parameter	Symbol	Value	Unit
Maximum Collector-Emitter Voltage	VCE(max)	1000	V
Maximum Emitter-Base Voltage	VEB(max)	5	V
Maximum Collector Current	IC(max)	15	A
Maximum Power Dissipation	PT(max)	120	W
Maximum Junction Temperature	TJ(max)	150	掳C
Storage Temperature Range	TSTG	-55 to 150	掳C
DC Current Gain (hFE)	hFE	20 to 80	-
Transition Frequency	fT	10	MHz

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table.
   • Handle the device with care to avoid mechanical damage.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

3. Biasing:

   • The base-emitter voltage (V_BE) should be kept within the specified range to avoid damage.
   • Use appropriate biasing circuits to ensure stable operation.

4. Operating Conditions:

   • Operate the device within the recommended temperature range to ensure reliable performance.
   • Monitor the junction temperature to prevent overheating.

5. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range.

6. Testing:

   • Use a suitable test setup to measure parameters like current gain and transition frequency.
   • Ensure that the test conditions do not exceed the maximum ratings.

7. Soldering:

   • Use a controlled soldering process to avoid thermal shock.
   • Follow the recommended soldering temperature and time to prevent damage to the device.

(For reference only)