KMB054N40DB

KMB054N40DB


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Breakdown Voltage V(BR)DSS - 400 - V Drain-to-source breakdown voltage
Continuous Drain Current ID - 5.4 - A Continuous drain current at Tc = 25掳C
Pulse Drain Current IGM - 67 - A Pulse drain current (t = 10 渭s, duty cycle 1%)
Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 V Gate threshold voltage
On-State Resistance RDS(on) - 0.085 - On-state resistance at VGS = 10 V, ID = 5.4 A
Input Capacitance Ciss - 1900 - pF Input capacitance
Output Capacitance Coss - 430 - pF Output capacitance
Reverse Transfer Capacitance Crss - 520 - pF Reverse transfer capacitance
Total Gate Charge Qg - 35 - nC Total gate charge
Switching Energy Eoss - 65 - nJ Output switching energy

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry, cool place.
    • Handle with care to avoid static damage.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum current or power dissipation.
    • Follow manufacturer guidelines for mounting torque and thermal interface materials.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure the gate voltage is within the specified range to prevent damage.
  4. Testing:

    • Use caution when testing; high voltages can be dangerous.
    • Verify all connections are secure and correct before applying power.
  5. Application Notes:

    • Refer to datasheet application notes for detailed circuit design recommendations.
    • Consider derating for continuous operation under harsh conditions.
(For reference only)

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