Details

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BUY 2SC3317 https://www.utsource.net/itm/p/12607336.html

Parameter	Symbol	Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	Continuous	-	-	400	V
Collector-Base Voltage	VCB	Continuous	-	-	400	V
Emitter-Base Voltage	VEB	Continuous	-6	-	6	V
Collector Current	IC	Continuous	-	-	15	A
Base Current	IB	Continuous	-	-	3	A
Power Dissipation	PT	TC = 25掳C	-	-	90	W
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature	TSTG	-	-55	-	150	掳C
Thermal Resistance	RthJC	Case to Junction	-	1.1	-	掳C/W

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table.
   • Use proper heat sinking to manage power dissipation and keep the junction temperature within safe limits.

2. Mounting:

   • Ensure good thermal contact between the transistor and the heat sink.
   • Use a thermal compound to improve heat transfer.

3. Biasing:

   • Proper biasing is crucial for reliable operation. Ensure that the base current (I_B) is sufficient to drive the collector current (I_C) as required by the application.

4. Storage:

   • Store the transistor in a dry, cool place within the specified storage temperature range.

5. Testing:

   • When testing, use a current-limited power supply to avoid accidental damage from excessive currents or voltages.

6. Soldering:

   • Use a controlled temperature soldering iron and avoid overheating the leads. Follow recommended soldering profiles to prevent damage to the device.

7. Application:

   • The 2SC3317 is suitable for high-power amplifiers, switching applications, and other circuits requiring high current and voltage handling capabilities.

(For reference only)