Details

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BUY 2SD1073 https://www.utsource.net/itm/p/12607355.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	800	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	PT	-	-	125	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	4	-	MHz

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SD1073 with care to avoid damage to the leads or the junction.
   • Use appropriate anti-static measures to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure proper alignment of the leads during soldering to avoid mechanical stress on the device.
   • Soldering temperature should not exceed 260掳C for more than 10 seconds to prevent damage to the junction.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table to avoid permanent damage to the device.
   • Operate the device within the recommended operating conditions to ensure reliable performance.

4. Thermal Management:

   • Provide adequate heat sinking to manage the power dissipation and keep the junction temperature within safe limits.
   • Ensure good thermal conductivity between the device and the heat sink.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Follow the storage temperature range to prevent degradation of the device.

6. Testing:

   • Use appropriate test equipment and methods to verify the performance parameters of the 2SD1073.
   • Ensure that the test conditions do not exceed the maximum ratings of the device.

7. Application Notes:

   • Refer to the datasheet and application notes for specific circuit design recommendations and considerations.
   • Consider the transition frequency when designing high-frequency circuits to optimize performance.

(For reference only)