Details

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BUY onsemi BDV65BG https://www.utsource.net/itm/p/12607365.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	80	V	IC = -1mA, TJ = 25掳C
Emitter-Base Voltage	VEB(O)	-3.0	-	-5.0	V	IE = -150mA, TJ = 25掳C
Collector-Emitter Saturation Voltage	VCE(SAT)	-	0.7	-	V	IC = -1A, IB = -0.1A, TJ = 25掳C
Base-Emitter Saturation Voltage	VEBO	-2.5	-	-3.0	V	IC = -1A, IB = -0.1A, TJ = 25掳C
Storage Temperature	TSTG	-65	-	150	掳C	-
Operating Junction Temperature	TJ	-65	-	150	掳C	-

Instructions for BDV65BG:

1. Handling Precautions: Use appropriate anti-static precautions when handling the device to avoid damage from electrostatic discharge (ESD).
2. Mounting: Ensure proper mounting and heat sinking if operating near maximum power dissipation limits.
3. Soldering: Solder within the recommended temperature profile to avoid thermal damage. Typically, soldering should not exceed 260掳C for more than 10 seconds.
4. Biasing: Ensure that base current is sufficient to keep the transistor in saturation when used as a switch to minimize power dissipation.
5. Temperature Monitoring: Monitor the junction temperature to ensure it does not exceed the maximum allowable limit, especially in high-power applications.
6. Storage: Store in a dry environment to prevent moisture-related issues.

(For reference only)