Details

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BUY 2SB631K https://www.utsource.net/itm/p/12607385.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0, IE = 0	-	-	45	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IC = 0, IE = 0	-	-	5	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 100mA, IB = 10mA	-	0.3	-	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 100mA, IB = 10mA	-	1.2	-	V
Collector Current	IC	Continuous	-	-	100	mA
Base Current	IB	Continuous	-	-	10	mA
Power Dissipation	PD	Tc = 25掳C	-	-	300	mW
Operating Temperature Range	Toper	-	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Avoid mechanical stress on the leads.

2. Biasing:

   • Ensure that the base current (IB) is sufficient to keep the transistor in saturation when used as a switch.
   • For linear applications, bias the transistor to operate in the active region.

3. Protection:

   • Use appropriate protection circuits (e.g., flyback diodes) when driving inductive loads.
   • Ensure that the collector-emitter voltage does not exceed the rated breakdown voltage.

4. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid static discharge, which can damage the device.

5. Testing:

   • Use a multimeter or transistor tester to verify the parameters before installation.
   • Test the device under the specified conditions to ensure it meets the required specifications.

6. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Use a soldering iron with a temperature of 300掳C to 350掳C.
   • Solder quickly to avoid overheating the device.

(For reference only)