Details

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Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-source on-resistance	RDS(on)	VGS = 10V, ID = 3A	-	65	-	mΩ
Gate charge	Qg	VDS = 200V, ID = 3A	-	24	-	nC
Input capacitance	Ciss	VDS = 200V	-	1100	-	pF
Output capacitance	Coss	VDS = 200V	-	270	-	pF
Total gate charge	Qg	VDS = 200V, ID = 3A	-	24	-	nC
Threshold voltage	VGS(th)	ID = 1mA	2.0	4.0	6.0	V
Continuous drain current	ID	TC = 25°C	-	-	3.0	A
Pulse drain current	Ipp	Pulse width ≤ 10μs, Duty cycle 1%	-	-	9.0	A
Power dissipation	PD	TC = 25°C	-	-	18	W

Instructions for Use:

1. Operating Voltage: Ensure that the operating voltage does not exceed the maximum ratings specified in the datasheet.
2. Heat Dissipation: The device should be mounted on a suitable heatsink if operating at high power levels to prevent overheating.
3. Gate Drive: Apply sufficient gate drive voltage (typically 10V) to ensure the MOSFET operates in its linear region with minimum RDS(on).
4. Storage and Handling: Store in a dry place and handle with care to avoid damage from electrostatic discharge (ESD).
5. Mounting Orientation: Ensure correct orientation during PCB mounting to avoid short circuits and ensure proper thermal management.
6. Pulse Current Handling: Be cautious of pulse current ratings; exceeding these can lead to premature failure.
7. Capacitance Considerations: Account for input and output capacitances when designing switching circuits to minimize switching losses.

Note: Always refer to the official STMicroelectronics datasheet for the most accurate and detailed information.

(For reference only)