Details

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BUY FGH60N60 https://www.utsource.net/itm/p/12607417.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source On-State Resistance at 25掳C	RDS(on) @ 25掳C	-	60	-	m惟
Drain-Source On-State Resistance at 150掳C	RDS(on) @ 150掳C	-	90	-	m惟
Continuous Drain Current	ID	-	60	-	A
Pulse Drain Current (t = 10 渭s)	IDM	-	180	-	A
Gate-Source Voltage	VGS	-15	0	15	V
Drain-Source Breakdown Voltage	BVdss	600	-	-	V
Total Gate Charge	Qg	-	140	-	nC
Input Capacitance	Ciss	-	3700	-	pF
Output Capacitance	Coss	-	1100	-	pF
Reverse Transfer Capacitance	Crss	-	900	-	pF
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature Range	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling and Storage:

   • Store the FGH60N60 in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid damaging the leads or the body of the device.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use a thermal interface material (TIM) to enhance heat transfer from the device to the heatsink.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly to avoid damage.
   • Use short, low-inductance leads to minimize parasitic effects.

4. Operating Conditions:

   • Do not exceed the maximum ratings for drain-source voltage, continuous drain current, and pulse drain current.
   • Ensure the gate-source voltage is within the specified range to prevent gate oxide damage.

5. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed 150掳C.
   • Consider derating the continuous drain current if operating at higher temperatures.

6. Testing:

   • Use appropriate test equipment and methods to verify the device parameters.
   • Follow safety guidelines when testing high-voltage and high-current circuits.

7. Application Notes:

   • Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.
   • For high-frequency switching applications, pay attention to the switching losses and choose suitable gate drive conditions.

(For reference only)