Details

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BUY 2SK163 https://www.utsource.net/itm/p/12607452.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-500	-	-1000	V
Gate-Source Voltage	VGS	-20	-	20	V
Drain Current	ID	-	1	3	A
Gate Threshold Voltage	VGS(th)	2	4	6	V
Transconductance	gfs	1000	-	3000	mS
Input Capacitance	Ciss	-	250	-	pF
Output Capacitance	Coss	-	100	-	pF
Reverse Transfer Capacitance	Crss	-	50	-	pF
Power Dissipation (Tc=25掳C)	Ptot	-	-	120	W
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Using 2SK163:

1. Handling Precautions:

   • The 2SK163 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling the device.
   • Avoid exposing the device to temperatures outside the specified storage temperature range.

2. Mounting:

   • Ensure that the mounting surface is clean and flat to avoid mechanical stress on the device.
   • Use thermal grease or a heat sink to improve heat dissipation, especially if operating near the maximum power dissipation.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating to prevent damage.

4. Operation:

   • Operate the device within the specified drain current (I_D) limits to avoid overheating and potential failure.
   • Monitor the junction temperature (T_J) to ensure it stays within the safe operating range.

5. Testing:

   • When testing the device, use a low current initially to verify the correct operation before increasing to the desired operating conditions.
   • Measure the gate threshold voltage (V_GS(th)) to ensure the device is functioning correctly.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against static and physical damage.

By following these guidelines, you can ensure reliable and efficient operation of the 2SK163.

(For reference only)