Details

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BUY BTA16-800BW. https://www.utsource.net/itm/p/12607484.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Rated RMS Current	IT(RMS)	-	16	-	A
Maximum RMS Voltage	VDRM	-	800	-	V
Peak Non-Repetitive	ITM1	-	-	200	A	t = 10 ms, IT(RMS) = 0 A
Gate Trigger Current	IGT	5	20	40	mA
Gate Trigger Voltage	VGT	1.5	2.0	2.5	V
Holding Current	IH	5	10	15	mA
Dissipation	PT	-	-	115	W	Case temperature TC = 70掳C
Junction Temperature	TJ	-	-	125	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting and Heat Sinking:

   • Ensure adequate heat sinking to maintain the junction temperature below 125掳C.
   • Use thermal compound between the device and the heat sink for better thermal conductivity.

2. Gate Drive:

   • Apply a gate trigger current (I_GT) within the specified range to turn on the device.
   • The gate trigger voltage (V_GT) should be within the specified limits to ensure reliable operation.

3. Current and Voltage Ratings:

   • Do not exceed the rated RMS current (I_T(RMS)) or maximum RMS voltage (V_DRM).
   • For peak non-repetitive conditions, ensure that the peak current (I_TM1) does not exceed 200 A for more than 10 ms.

4. Holding Current:

   • Ensure that the holding current (I_H) is maintained to keep the device in the on state.

5. Thermal Management:

   • Monitor the case temperature (T_C) and ensure it does not exceed 70掳C to prevent excessive junction temperature.

6. Storage Conditions:

   • Store the device in a temperature range between -55掳C and 150掳C to avoid damage.

7. Handling Precautions:

   • Handle the device with care to avoid mechanical stress.
   • Use appropriate ESD protection to prevent damage from static electricity.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)