Details

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BUY 18N60DM2 https://www.utsource.net/itm/p/12607506.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Drain-Source Voltage	VDS	-60	-	-	V	Maximum reverse voltage that can be applied between drain and source.
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage that can be applied between gate and source.
Continuous Drain Current	ID	-	18	24	A	Maximum continuous current through the drain.
Pulse Drain Current	ID(pulse)	-	45	-	A	Maximum pulse current through the drain (tp = 10 ms, fc = 1 kHz).
Power Dissipation	PD	-	120	-	W	Maximum power dissipation at TA = 25掳C.
Junction Temperature	TJ	-	-	175	掳C	Maximum operating junction temperature.
Storage Temperature	TSTG	-55	-	150	掳C	Temperature range for storage and non-operating conditions.
Thermal Resistance	R胃JC	-	1.5	-	掳C/W	Thermal resistance from junction to case.
Input Capacitance	Ciss	-	1300	-	pF	Input capacitance at VDS = 15 V, VGS = 0 V.
Output Capacitance	Coss	-	100	-	pF	Output capacitance at VDS = 15 V, VGS = 0 V.
Reverse Transfer Capacitance	Crss	-	300	-	pF	Reverse transfer capacitance at VDS = 15 V, VGS = 0 V.
Turn-On Delay Time	td(on)	-	40	-	ns	Turn-on delay time at ID = 10 A, VGS = 10 V.
Rise Time	tr	-	15	-	ns	Rise time at ID = 10 A, VGS = 10 V.
Turn-Off Delay Time	td(off)	-	30	-	ns	Turn-off delay time at ID = 10 A, VGS = 10 V.
Fall Time	tf	-	10	-	ns	Fall time at ID = 10 A, VGS = 10 V.

Instructions for Use:

1. Handling Precautions:

   • Handle the 18N60DM2 with care to avoid damage to the leads and the body.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal grease or a thermal pad between the device and the heat sink for better thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Use a gate resistor to limit the gate current and prevent oscillations.

4. Operating Conditions:

   • Do not exceed the maximum drain-source voltage (V_DS) to prevent breakdown.
   • Ensure the continuous drain current (I_D) does not exceed the rated value to avoid overheating.

5. Pulse Operation:

   • For pulse operation, ensure the pulse width and frequency are within the specified limits to avoid exceeding the maximum pulse drain current (I_D(pulse)).

6. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range to prevent damage.

7. Testing:

   • Use appropriate test equipment and methods to measure parameters such as input capacitance, output capacitance, and switching times.
   • Refer to the datasheet for specific test conditions and procedures.

(For reference only)