Details

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BUY SI-3052V https://www.utsource.net/itm/p/12607511.html

Parameter	Description	Value
Part Number	Full part number	SI-3052V
Type	Type of device	MOSFET
Package	Package type	TO-220
Polarity	Polarity of the MOSFET	N-Channel
Vds (Max)	Drain-to-Source Voltage	55V
Vgs (Max)	Gate-to-Source Voltage	卤20V
Id (Max)	Continuous Drain Current	11A
Rds(on) (Max)	On-State Resistance at Vgs = 10V	18m惟
Power Dissipation	Maximum Power Dissipation	65W
Operating Temperature	Junction Temperature Range	-55掳C to +150掳C
Storage Temperature	Storage Temperature Range	-65掳C to +150掳C
Gate Charge	Total Gate Charge	75nC
Input Capacitance	Input Capacitance at Vds = 0V, f = 1MHz	1000pF
Output Capacitance	Output Capacitance at Vds = 0V, f = 1MHz	400pF
Reverse Transfer Capacitance	Reverse Transfer Capacitance at Vds = 0V, f = 1MHz	350pF
Thermal Resistance (Junction to Case)	Thermal Resistance	1.5掳C/W
Thermal Resistance (Junction to Ambient)	Thermal Resistance	62.5掳C/W

Instructions for Use:

1. Handling Precautions:

   • Handle the SI-3052V with care to avoid damage to the leads and the body.
   • Use appropriate ESD protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking if operating at high power levels to maintain junction temperature within safe limits.
   • Use a thermal compound between the MOSFET and the heatsink for better thermal conductivity.

3. Biasing:

   • Apply a gate voltage (Vgs) within the specified range to turn the MOSFET on or off.
   • For optimal performance, ensure the gate voltage is sufficient to fully turn on the MOSFET, typically around 10V for this device.

4. Operational Limits:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the device.
   • Monitor the junction temperature to ensure it remains within the specified operating range.

5. Testing:

   • When testing the device, use a suitable test circuit that simulates the intended application.
   • Measure the drain current (Id) and drain-to-source voltage (Vds) to verify proper operation.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and physical damage.

(For reference only)