Details

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BUY MK48Z12B-20 https://www.utsource.net/itm/p/12607517.html

Parameter	Description	Value
Part Number	Full part number	MK48Z12B-20
Type	Type of device	Non-volatile Memory
Technology	Memory technology	SRAM with EEPROM
Memory Size	Total memory size	128 Kbits
Organization	Memory organization	16K x 8 bits
Voltage - Supply	Operating supply voltage range	1.8V to 5.5V
Data Retention	Data retention at 85掳C	10 years
Write Cycles	Endurance cycles for EEPROM	1 million
Operating Temp.	Operating temperature range	-40掳C to +85掳C
Package	Package type	SOIC-8
Pin Count	Number of pins	8
Standby Current	Current consumption in standby mode	1 渭A (typical)
Active Current	Current consumption in active mode	3 mA (typical)
Access Time	Access time for read/write operations	70 ns (maximum)

Instructions:

1. Power Supply:

   • Ensure the supply voltage is within the specified range (1.8V to 5.5V).
   • Use a stable power source to avoid data corruption.

2. Pin Configuration:

   • VCC: Power supply input.
   • GND: Ground.
   • A0-A12: Address lines (A0 is the least significant bit).
   • D0-D7: Data lines (D0 is the least significant bit).
   • WE: Write enable (active low).
   • OE: Output enable (active low).
   • CE: Chip enable (active low).

3. Read Operation:

   • Set CE and OE low to enable the chip and data output.
   • Apply the desired address to the address lines.
   • Data will appear on the data lines after the access time.

4. Write Operation:

   • Set CE and WE low to enable the chip and write operation.
   • Apply the desired address to the address lines.
   • Apply the data to be written to the data lines.
   • Hold WE low for the duration of the write cycle.
   • Return WE high to complete the write operation.

5. EEPROM Programming:

   • Follow the specific programming sequence provided in the datasheet for EEPROM operations.
   • Ensure adequate delay times between write cycles to prevent data corruption.

6. Storage and Handling:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid static discharge which can damage the device.

7. Testing:

   • Perform initial testing under controlled conditions to ensure proper functionality.
   • Verify data integrity after each write operation.

(For reference only)