Details

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BUY FQU20N06L https://www.utsource.net/itm/p/12607534.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	-	60	V	Maximum voltage between drain and source with the gate open.
Gate-Source Voltage	VGS	-10	-	10	V	Maximum voltage between gate and source.
Continuous Drain Current	ID	-	4.0	-	A	Maximum continuous current through the drain to source.
Pulse Drain Current	ID(p)	-	8.0	-	A	Maximum pulse current through the drain to source (tpulse = 10 ms, IG = 5 V).
Power Dissipation	PTOT	-	-	2.3	W	Maximum total power dissipation (TA = 25掳C).
Junction Temperature	TJ	-	-	150	掳C	Maximum junction temperature.
Storage Temperature	TSTG	-55	-	150	掳C	Operating temperature range for storage.
Gate Charge	QG	-	12	-	nC	Total gate charge.
Input Capacitance	Ciss	-	220	-	pF	Input capacitance at VGS = 10 V, VDS = 10 V.
Output Capacitance	Coss	-	45	-	pF	Output capacitance at VGS = 0 V, VDS = 10 V.
Reverse Transfer Capacitance	Crss	-	15	-	pF	Reverse transfer capacitance at VGS = 0 V, VDS = 10 V.
On-State Resistance	RDS(on)	-	0.045	-	惟	On-state resistance at VGS = 10 V, ID = 4.0 A.
Gate Threshold Voltage	VGS(th)	1.0	1.8	3.0	V	Gate threshold voltage at ID = 250 渭A.

Instructions for Use:

1. Handling Precautions:

   • Handle the FQU20N06L with care to avoid damage to the leads and body.
   • Use ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

2. Mounting:

   • Ensure proper thermal management by providing adequate heat sinking if operating near maximum power dissipation.
   • Soldering should be done within the recommended temperature and time limits to avoid damage to the device.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to prevent damage or reduced performance.
   • Operate within the specified temperature ranges to ensure reliable performance.

4. Testing:

   • Use appropriate test equipment and methods to measure parameters such as on-state resistance, gate threshold voltage, and capacitances.
   • Ensure that the test conditions match those specified in the datasheet for accurate results.

5. Storage:

   • Store the FQU20N06L in a dry, cool environment to prevent moisture damage.
   • Follow recommended storage practices to maintain the integrity of the device.

6. Application Notes:

   • Refer to application notes and design guides for specific circuit recommendations and best practices.
   • Consider using external components like gate resistors and flyback diodes in switching applications to improve performance and reliability.

(For reference only)