Details

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BUY 26NM60N. https://www.utsource.net/itm/p/12607537.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-60	-	-	V	-
Gate-Source Voltage	VGS	-15	-	15	V	-
Continuous Drain Current	ID	-	12	14	A	@ TA = 25掳C, VGS = 10V
Pulse Drain Current	ID(p)	-	30	-	A	@ TC = 25掳C, tp = 10渭s, Duty Cycle = 1%
Power Dissipation	PTOT	-	-	110	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
Thermal Resistance, Junction to Case	R胃JC	-	0.75	-	掳C/W	-
Total Gate Charge	QG	-	80	-	nC	@ VGS = 10V, ID = 10A
Input Capacitance	Ciss	-	1200	-	pF	@ VDS = 10V, f = 1MHz
Output Capacitance	Coss	-	350	-	pF	@ VDS = 10V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	120	-	pF	@ VDS = 10V, f = 1MHz

Instructions for Use:

1. Voltage Handling:

   • Ensure that the drain-source voltage (V_DS) does not exceed 60V.
   • The gate-source voltage (V_GS) should be within 卤15V to avoid damage to the device.

2. Current Management:

   • The continuous drain current (I_D) should not exceed 14A at room temperature (25掳C).
   • For pulse applications, the peak drain current (I_D(p)) can go up to 30A, but only for very short durations (10渭s) and with a low duty cycle (1%).

3. Thermal Management:

   • The power dissipation (P_TOT) should not exceed 110W at a case temperature (T_C) of 25掳C.
   • The junction temperature (T_J) must be kept below 150掳C to ensure reliable operation.
   • Use appropriate heat sinks or cooling methods to manage thermal resistance (R_胃JC).

4. Environmental Conditions:

   • Store the device in an environment where the temperature ranges from -55掳C to 150掳C (T_STG).

5. Capacitance Considerations:

   • Be aware of the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) when designing circuits to minimize switching losses and ensure stable operation.

6. Gate Drive:

   • Apply sufficient gate drive voltage (V_GS) to fully turn on the device, typically around 10V.
   • Ensure the total gate charge (Q_G) is accounted for in the gate drive circuit to achieve fast switching times.

7. Safety Precautions:

   • Always handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Follow proper soldering techniques and avoid overheating during assembly.

By adhering to these parameters and instructions, you can ensure optimal performance and longevity of the 26NM60N MOSFET.

(For reference only)