Details

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BUY 30K60T https://www.utsource.net/itm/p/12607538.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Forward Voltage	V_F	-	1.8	2.4	V	Voltage at forward current
Reverse Breakdown Voltage	V_R	60	-	-	V	Reverse voltage at which breakdown occurs
Forward Current	I_F	-	30	-	mA	Maximum continuous forward current
Peak Forward Current	I_FM	-	-	150	mA	Maximum peak forward current
Operating Temperature	T_op	-40	-	85	掳C	Range of operating temperatures
Storage Temperature	T_stg	-55	-	150	掳C	Range of storage temperatures
Thermal Resistance	R_th	-	120	-	K/W	Junction to ambient thermal resistance
Reverse Leakage Current	I_R	-	100	-	nA	Reverse leakage current at rated reverse voltage
Capacitance	C	-	10	-	pF	Capacitance at zero bias

Instructions:

1. Forward Biasing:

   • Ensure that the forward voltage (V_F) does not exceed 2.4V to avoid damage.
   • The continuous forward current (I_F) should not exceed 30mA. For pulse applications, the peak forward current (I_FM) can go up to 150mA.

2. Reverse Biasing:

   • The reverse breakdown voltage (V_R) is 60V. Ensure that the reverse voltage does not exceed this value to prevent breakdown.
   • The reverse leakage current (I_R) should be monitored and should not exceed 100nA at the rated reverse voltage.

3. Temperature Considerations:

   • The device can operate within a temperature range of -40掳C to 85掳C.
   • For storage, the temperature range is -55掳C to 150掳C.

4. Thermal Management:

   • The thermal resistance (R_th) from junction to ambient is 120 K/W. Proper heat sinking may be required for high-power applications to ensure the junction temperature remains within safe limits.

5. Capacitance:

   • The capacitance (C) at zero bias is typically 10pF. This should be considered in high-frequency applications.

6. Handling and Storage:

   • Handle the device with care to avoid static discharge and physical damage.
   • Store the device in a dry environment within the specified storage temperature range.

(For reference only)