Details

---

BUY 2SD1088 https://www.utsource.net/itm/p/12607571.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	450	V
Collector-Base Voltage	VCB	-	-	450	V
Emitter-Base Voltage	VEB	-6	-	-2	V
Continuous Collector Current	IC	-	-	15	A	TA = 25掳C
Continuous Collector Current	IC	-	-	8	A	TA = 75掳C
Total Power Dissipation	PT	-	-	125	W	TC = 25掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Junction Temperature	TJ	-	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside its specified storage range.
   • Handle with care to prevent mechanical damage.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within safe limits.
   • Use appropriate mounting hardware to secure the transistor to the heat sink.

3. Biasing:

   • Apply base current (I_B) carefully to avoid exceeding the maximum collector current (I_C).
   • Ensure that the base-emitter voltage (V_EB) does not exceed the maximum rating.

4. Power Dissipation:

   • Monitor the power dissipation (P_T) to ensure it does not exceed the maximum rating, especially at higher ambient temperatures.

5. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Keep the device away from static electricity sources to avoid damage.

6. Testing:

   • Use a suitable test setup to verify the parameters before integrating the transistor into a circuit.
   • Refer to the datasheet for specific test conditions and procedures.

(For reference only)