Details

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BUY 2SD1298 https://www.utsource.net/itm/p/12607594.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	600	V	IC = 10 mA, TC = 25掳C
Emitter-Collector Voltage	VECC	-	-	600	V	IC = 10 mA, TC = 25掳C
Base-Emitter Voltage	VBE	-	1.8	2.5	V	IC = 1 A, TC = 25掳C
Collector Current	IC	-	10	15	A	VCE = 30 V, TC = 25掳C
Base Current	IB	-	0.5	1	A	VCE = 30 V, TC = 25掳C
Power Dissipation	PT	-	-	125	W	TC = 25掳C
Operating Temperature	TOP	-20	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SD1298 with care to avoid mechanical damage.
   • Use appropriate heat sinks to manage power dissipation and maintain operating temperature within specified limits.

2. Biasing:

   • Ensure that the base current (I_B) is sufficient to fully saturate the transistor when used as a switch.
   • For linear applications, adjust the base current to achieve the desired collector current (I_C).

3. Thermal Management:

   • The maximum power dissipation (P_T) must be managed by using adequate heat sinks or cooling methods.
   • Monitor the junction temperature (T_J) to ensure it does not exceed the maximum operating temperature (T_OP).

4. Voltage and Current Ratings:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CEO), emitter-collector voltage (V_ECC), and base-emitter voltage (V_BE).
   • Ensure that the collector current (I_C) and base current (I_B) do not exceed their respective maximum values.

5. Storage:

   • Store the 2SD1298 in a dry environment to prevent moisture damage.
   • Avoid exposure to extreme temperatures outside the storage temperature range (T_STG).

6. Testing:

   • Use appropriate test equipment and procedures to verify the performance parameters of the 2SD1298.
   • Refer to the datasheet for detailed testing procedures and recommended test conditions.

(For reference only)