Details

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BUY G10N60RUFD https://www.utsource.net/itm/p/12607615.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)	-	-	1200	V	Maximum repetitive peak reverse voltage
Continuous Current	I(T)	-	10	-	A	RMS value of sinusoidal waveform at 100掳C case
Peak Current	I(TM)	-	-	80	A	Non-repetitive peak on-state current
Forward Voltage Drop	V(F)	1.5	1.7	2.0	V @ 10A	Forward voltage drop at specified current
Reverse Recovery Time	t(rr)	-	35	-	ns	Reverse recovery time
Junction Temperature	Tj	-55	-	150	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	掳C	Storage temperature range

Instructions for Use:

1. Mounting and Handling:

   • Handle the G10N60RUFD with care to avoid mechanical stress.
   • Ensure proper heat sinking to manage the junction temperature, especially under high current conditions.

2. Electrical Connections:

   • Connect the device according to the polarity markings.
   • Use appropriate wire gauges to handle the rated current.

3. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature within the specified range.
   • Use thermal paste between the device and the heatsink for better thermal conductivity.

4. Surge Current:

   • The non-repetitive peak on-state current (I(TM)) should not be exceeded for more than a few milliseconds to avoid damage.

5. Reverse Voltage:

   • Do not exceed the maximum repetitive peak reverse voltage (V(BR)) to prevent breakdown.

6. Storage:

   • Store the device in a dry environment within the specified storage temperature range to prevent degradation.

7. Testing:

   • Perform initial testing at low power levels to ensure proper operation before applying full load.

8. Compliance:

   • Ensure that the application complies with relevant safety and regulatory standards.

(For reference only)