29F040C-90

29F040C-90


Specifications
SKU
12607616
Details

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Parameter Description Value
Device Type Flash Memory
Manufacturer Intel
Part Number 29F040C-90
Memory Size 512 K x 8 bits (4 Mbit)
Voltage (Vcc) Supply Voltage 2.7V to 3.6V
Operating Temperature -40掳C to +85掳C
Access Time Read Access Time 90 ns
Write Cycle Time Program/Erase Cycle Time 5 ms / 10 ms
Endurance Write/Erase Cycles 100,000
Data Retention Data Retention Time 10 years
Package TSOP-48
Pin Count 48
Standby Current Power Consumption in Standby Mode 10 渭A
Active Current Power Consumption in Active Mode 20 mA

Instructions for Use

  1. Power Supply:

    • Connect Vcc to a stable power supply within the range of 2.7V to 3.6V.
    • Connect Vss to ground.
  2. Address Lines:

    • Connect the address lines (A0-A18) to the appropriate address outputs from your microcontroller or address decoder.
  3. Data Lines:

    • Connect the data lines (D0-D7) to the corresponding data inputs/outputs of your microcontroller.
  4. Control Signals:

    • Chip Enable (CE#): Low to enable the device.
    • Output Enable (OE#): Low to enable data output.
    • Write Enable (WE#): Low to initiate a write operation.
    • Write Protect (WP#): High to allow writing, low to protect against accidental writes.
    • Ready/Busy (R/B#): Low when the device is busy, high when ready.
  5. Programming:

    • Follow the specific programming sequence detailed in the datasheet for writing data to the memory.
    • Ensure that the write cycle time (5 ms) is respected to avoid data corruption.
  6. Erase:

    • Use the block erase command to erase a block of memory.
    • Ensure that the erase cycle time (10 ms) is respected to avoid incomplete erasure.
  7. Standby Mode:

    • To enter standby mode, set CE# high. This will reduce power consumption to 10 渭A.
  8. Handling:

    • Handle the device with care to avoid static damage.
    • Store in a dry environment to prevent moisture-related issues.
  9. Testing:

    • After programming, verify the contents of the memory using a read operation to ensure data integrity.

For detailed timing diagrams and specific commands, refer to the full datasheet provided by Intel.

(For reference only)

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