Details
BUY 29F040C-90 https://www.utsource.net/itm/p/12607616.html
| Parameter | Description | Value |
|---|---|---|
| Device Type | Flash Memory | |
| Manufacturer | Intel | |
| Part Number | 29F040C-90 | |
| Memory Size | 512 K x 8 bits (4 Mbit) | |
| Voltage (Vcc) | Supply Voltage | 2.7V to 3.6V |
| Operating Temperature | -40掳C to +85掳C | |
| Access Time | Read Access Time | 90 ns |
| Write Cycle Time | Program/Erase Cycle Time | 5 ms / 10 ms |
| Endurance | Write/Erase Cycles | 100,000 |
| Data Retention | Data Retention Time | 10 years |
| Package | TSOP-48 | |
| Pin Count | 48 | |
| Standby Current | Power Consumption in Standby Mode | 10 渭A |
| Active Current | Power Consumption in Active Mode | 20 mA |
Instructions for Use
Power Supply:
- Connect Vcc to a stable power supply within the range of 2.7V to 3.6V.
- Connect Vss to ground.
Address Lines:
- Connect the address lines (A0-A18) to the appropriate address outputs from your microcontroller or address decoder.
Data Lines:
- Connect the data lines (D0-D7) to the corresponding data inputs/outputs of your microcontroller.
Control Signals:
- Chip Enable (CE#): Low to enable the device.
- Output Enable (OE#): Low to enable data output.
- Write Enable (WE#): Low to initiate a write operation.
- Write Protect (WP#): High to allow writing, low to protect against accidental writes.
- Ready/Busy (R/B#): Low when the device is busy, high when ready.
Programming:
- Follow the specific programming sequence detailed in the datasheet for writing data to the memory.
- Ensure that the write cycle time (5 ms) is respected to avoid data corruption.
Erase:
- Use the block erase command to erase a block of memory.
- Ensure that the erase cycle time (10 ms) is respected to avoid incomplete erasure.
Standby Mode:
- To enter standby mode, set CE# high. This will reduce power consumption to 10 渭A.
Handling:
- Handle the device with care to avoid static damage.
- Store in a dry environment to prevent moisture-related issues.
Testing:
- After programming, verify the contents of the memory using a read operation to ensure data integrity.
For detailed timing diagrams and specific commands, refer to the full datasheet provided by Intel.
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