Details

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BUY SGB02N120 https://www.utsource.net/itm/p/12607647.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BV	-	1200	-	V	Maximum repetitive peak reverse voltage
Continuous Drain Current	ID	-	2.0	-	A	Continuous drain current at Tc = 25掳C
Pulse Drain Current	Ipp	-	8.0	-	A	Non-repetitive peak pulse current, tp = 10 渭s
Gate-Source Voltage	VGS	-20	-	20	V	Maximum gate-source voltage
Drain-Source On-Resistance	RDS(on)	-	2.4	-	惟	On-state resistance at VGS = 15V, ID = 2A
Input Capacitance	Ciss	-	1650	-	pF	Input capacitance at VDS = 500V, f = 1 MHz
Output Capacitance	Coss	-	330	-	pF	Output capacitance at VDS = 500V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	400	-	pF	Reverse transfer capacitance at VDS = 500V, f = 1 MHz
Total Gate Charge	Qg	-	90	-	nC	Total gate charge at VDS = 500V, ID = 2A
Turn-On Delay Time	td(on)	-	25	-	ns	Turn-on delay time at VDS = 500V, ID = 2A
Rise Time	tr	-	35	-	ns	Rise time at VDS = 500V, ID = 2A
Turn-Off Delay Time	td(off)	-	20	-	ns	Turn-off delay time at VDS = 500V, ID = 2A
Fall Time	tf	-	30	-	ns	Fall time at VDS = 500V, ID = 2A
Junction Temperature	TJ	-55	-	150	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	掳C	Storage temperature range

Instructions for Use:

1. Power Supply and Biasing:

   • Ensure the supply voltage does not exceed the maximum breakdown voltage (BV) of 1200V.
   • Apply the appropriate gate-source voltage (VGS) within the range of -20V to +20V.

2. Current Handling:

   • Do not exceed the continuous drain current (ID) of 2.0A at a case temperature (Tc) of 25掳C.
   • For pulse applications, ensure the non-repetitive peak pulse current (Ipp) does not exceed 8.0A for a pulse duration of 10 渭s.

3. Thermal Management:

   • Operate the device within the specified junction temperature range (-55掳C to 150掳C).
   • Use appropriate heat sinks or cooling methods to manage thermal dissipation, especially under high current conditions.

4. Capacitance and Charge:

   • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the circuit to avoid instability or excessive switching losses.
   • Consider the total gate charge (Qg) for efficient gate drive design.

5. Switching Characteristics:

   • Optimize the turn-on delay time (td(on)), rise time (tr), turn-off delay time (td(off)), and fall time (tf) for minimal switching losses and reliable operation.

6. Storage:

   • Store the device in a dry environment within the storage temperature range (-55掳C to 150掳C).

7. Handling:

   • Handle the device with care to avoid mechanical damage and static discharge. Use ESD protection measures during handling and assembly.

By following these parameters and instructions, you can ensure optimal performance and reliability of the SGB02N120 MOSFET.

(For reference only)