FA1A60N-C6-L3

FA1A60N-C6-L3


Specifications
Details

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Parameter Description Value Unit
Part Number Full part identification FA1A60N-C6-L3 -
Type Device type Phototransistor -
Supply Voltage Maximum supply voltage 60 V
Emitter Current Continuous emitter current 50 mA
Peak Wavelength Emission peak wavelength 880 nm
Forward Voltage Forward voltage at specified current 1.2 V
Reverse Voltage Maximum reverse voltage 5 V
Response Time Rise and fall time 4 渭s
Operating Temp. Operating temperature range -40 to +85 掳C

Instructions:

  1. Handling: Use appropriate anti-static measures when handling the device to prevent damage from electrostatic discharge (ESD).
  2. Mounting: Ensure proper alignment during mounting to avoid mechanical stress on the leads.
  3. Soldering: Do not exceed a soldering temperature of 260掳C for more than 10 seconds per operation.
  4. Power Supply: Ensure that the supply voltage does not exceed the maximum rated voltage to prevent damage.
  5. Current Limiting: Use a suitable resistor to limit the current through the phototransistor within its continuous emitter current rating.
  6. Environmental Conditions: Operate the device within the specified temperature range to ensure reliable performance.
  7. Testing: During testing, ensure that all parameters are within the specified limits to avoid premature failure.
(For reference only)

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