IPB017N10N5

IPB017N10N5


Specifications
Details

BUY IPB017N10N5 https://www.utsource.net/itm/p/12607656.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS 100 V Maximum drain-source voltage
Gate-Source Voltage VGS -10 20 V Maximum gate-source voltage
Continuous Drain Current ID 3.6 5.8 A Continuous drain current at Tc = 25掳C
Pulse Drain Current IDM 9 18 A Pulse drain current (t = 10 ms, duty 1%)
Total Power Dissipation PD 40 W Total power dissipation at Tc = 25掳C
Junction Temperature TJ -55 175 掳C Operating junction temperature range
Storage Temperature TSTG -55 175 掳C Storage temperature range

Instructions for IPB017N10N5:

  1. Handling Precautions:

    • The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
  2. Mounting:

    • Ensure good thermal contact with the heatsink to maintain operating temperatures within specified limits.
    • Tighten mounting screws to recommended torque values to avoid damage or poor thermal performance.
  3. Operating Conditions:

    • Operate the device within the specified temperature and voltage ranges to ensure reliable performance.
    • Do not exceed the maximum ratings as listed in the parameter table to prevent device failure.
  4. Testing:

    • Before applying full load conditions, verify all connections and perform initial testing under controlled conditions to ensure correct operation.
  5. Storage:

    • Store in a dry environment away from direct sunlight and sources of heat to protect against moisture and temperature-related damage.
  6. Disposal:

    • Follow local regulations for the disposal of electronic components. Consider recycling options where available.
(For reference only)

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