Details

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BUY 2SC4051 https://www.utsource.net/itm/p/12607665.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 50 mA, Tc = 25掳C
Collector-Base Voltage	VCBO	-	-	60	V	IC = 0, IB = 0, Tc = 25掳C
Emitter-Base Voltage	VEBO	-	-1.8	-1	V	IE = 50 mA, Tc = 25掳C
Collector Current	IC	-	-	50	mA	VCE = 30 V, Tc = 25掳C
Base Current	IB	-	-	5	mA	VCE = 30 V, IC = 50 mA, Tc = 25掳C
Power Dissipation	PD	-	-	625	mW	Tc = 25掳C
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: Avoid exposing the device to temperatures outside the specified operating range to prevent damage.
2. Mounting: Ensure proper heat dissipation if the transistor is used at or near its maximum power dissipation.
3. Biasing: Operate within the recommended base current limits to avoid overheating and potential damage.
4. Storage: Store in a dry environment within the storage temperature range to maintain performance characteristics.
5. Electrostatic Discharge (ESD) Protection: Handle with care to avoid ESD which can damage sensitive components.
6. Testing: When testing the device, ensure that all voltages and currents are within the specified limits to avoid premature failure.

This table and set of instructions provide a comprehensive overview of the key parameters and operational guidelines for the 2SC4051 transistor.

(For reference only)