Details

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BUY MT48LC4M32B2P6A:G https://www.utsource.net/itm/p/12607677.html

Parameter	Description	Value
Type	Synchronous DRAM (SDRAM)	-
Organization	x32	-
Density	4M x 32	-
Voltage Supply (Vcc)	Operating Voltage	3.3V 卤0.3V
Voltage Supply (Vccq)	I/O Power Supply	3.3V 卤0.3V
Data Width	I/O Configuration	x32
Access Time (tAC)	Access Time from CLK	6.0 ns typical
Cycle Time (tRC)	Row Cycle Time	60 ns typical
Package	Packaging Type	FBGA
Operating Temperature	Industrial Temperature Range	-40掳C to +85掳C
Refresh	Refresh Rate	8K refresh cycles per 64ms
CAS Latency	CAS Latency	CL=2, 3
Burst Length	Supported Burst Lengths	1, 2, 4, 8
Write Burst Mode	Write Operation	Programmable
Drive Strength	Output Drive Strength	RZQ/6

Instructions for Use:

1. Power Supply Requirements: Ensure that both Vcc and Vccq are supplied with 3.3V 卤0.3V. Proper decoupling capacitors should be placed close to the power supply pins.
2. Initialization: After applying power, ensure proper initialization of the device by following the sequence specified in the datasheet.
3. Timing Parameters: Adhere strictly to the timing parameters such as tAC and tRC to avoid data corruption or loss.
4. Refresh Operations: Implement a refresh cycle every 64ms to maintain data integrity.
5. CAS Latency Setting: Configure the CAS latency according to system requirements, either CL=2 or CL=3.
6. Burst Length Configuration: Set the burst length based on system needs; options include 1, 2, 4, and 8.
7. Write Burst Mode: Enable or disable write burst mode as required by your application.
8. Drive Strength Adjustment: Adjust the output drive strength if necessary, typically set to RZQ/6 for optimal performance.
9. Temperature Considerations: Operate within the industrial temperature range (-40掳C to +85掳C) to ensure reliable operation.
10. Handling and Storage: Follow standard ESD handling procedures and store in appropriate anti-static packaging when not in use.

(For reference only)