Details

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BUY 2SB826 https://www.utsource.net/itm/p/12607691.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage (Max)	VCEO	300	V
Collector-Base Voltage (Max)	VCBO	350	V
Emitter-Base Voltage (Max)	VEBO	5	V
Collector Current (Continuous)	IC	15	A
Power Dissipation (Max)	PT	125	W
Transition Frequency	fT	4	MHz
Storage Temperature Range	TSTG	-55 to 150	掳C
Operating Temperature Range	TOP	-55 to 150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage power dissipation.
   • Use a suitable mounting torque to avoid damage.

2. Biasing:

   • Apply appropriate biasing voltages to ensure stable operation.
   • Avoid exceeding the maximum ratings for collector-emitter, collector-base, and emitter-base voltages.

3. Current Handling:

   • Do not exceed the maximum collector current to prevent overheating and potential failure.
   • Consider derating the current at higher temperatures to maintain reliability.

4. Thermal Management:

   • Monitor the junction temperature to stay within the operating range.
   • Use thermal paste between the transistor and heat sink for better heat transfer.

5. Storage:

   • Store in a dry environment to prevent moisture damage.
   • Keep away from extreme temperatures to avoid degradation.

6. Handling:

   • Handle with care to avoid mechanical stress.
   • Use anti-static precautions to prevent damage from electrostatic discharge.

7. Testing:

   • Perform initial testing under controlled conditions to verify performance.
   • Regularly check for signs of wear or degradation during operation.

(For reference only)