Details

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BUY 2SD836 https://www.utsource.net/itm/p/12607718.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	400	V	-
Emitter-Base Voltage	VEB	-6	-	6	V	-
Collector Current	IC	-	15	-	A	-
Base Current	IB	-	3	-	A	-
Power Dissipation	PT	-	-	125	W	-
Junction Temperature	TJ	-55	-	150	掳C	-
Storage Temperature	TSTG	-65	-	150	掳C	-
Thermal Resistance	RthJC	-	1.5	-	K/W	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to secure the device.

2. Biasing:

   • Apply base current (I_B) to control the collector current (I_C).
   • Ensure that the base-emitter voltage (V_EB) does not exceed the maximum ratings.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (V_CE) or power dissipation (P_T).
   • Monitor the junction temperature (T_J) to avoid overheating.

4. Storage:

   • Store the device in a dry, cool place within the storage temperature range (T_STG).

5. Handling:

   • Handle with care to avoid mechanical damage.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

6. Testing:

   • Use appropriate test equipment and methods to ensure accurate measurements.
   • Refer to the datasheet for specific test conditions and procedures.

(For reference only)