Details

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BUY 2SB750 https://www.utsource.net/itm/p/12607719.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	600	V	IC = 10 mA
Emitter-Collector Voltage	VECC	-	-	600	V	IC = 10 mA
Base-Emitter Voltage	VBE	-	2.3	2.8	V	IC = 100 mA, IB = 10 mA
Collector Current	IC	-	-	10	A	VCE = 600 V
Base Current	IB	-	-	1	A	VCE = 600 V
Power Dissipation	PT	-	-	125	W	TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-65	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SB750 with care to avoid damage to the leads or body.
   • Avoid exposing the transistor to excessive heat or mechanical stress.

2. Mounting:

   • Ensure proper mounting to a heatsink if operating at high power levels.
   • Use thermal compound between the transistor and heatsink for efficient heat dissipation.

3. Biasing:

   • Ensure the base current (I_B) is sufficient to fully turn on the transistor for the desired collector current (I_C).
   • Use a base resistor to limit the base current and prevent damage to the transistor.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the specified temperature range to ensure reliable performance.

5. Testing:

   • When testing, use a current-limited power supply to avoid accidental overcurrent conditions.
   • Measure the V_CE and V_BE voltages to verify proper operation.

6. Storage:

   • Store the 2SB750 in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistor in its original packaging until ready for use to protect against static discharge.

7. Soldering:

   • Use a soldering iron with a temperature no higher than 300掳C.
   • Complete soldering within 10 seconds to avoid thermal damage to the transistor.

(For reference only)