Details

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BUY 2SD1026 https://www.utsource.net/itm/p/12607732.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	800	V	IC = 150 mA, Tc = 25掳C
Emitter-Collector Voltage	VECEO	-	-	800	V	IC = -150 mA, Tc = 25掳C
Collector-Base Voltage	VCBO	-	-	800	V	IB = 0, IC = 0, Tc = 25掳C
Base-Emitter Voltage	VBE(on)	1.4	1.8	2.2	V	IC = 150 mA, IB = 15 mA, Tc = 25掳C
Collector Current	IC	-	150	-	mA	VCE = 30 V, Tc = 25掳C
Base Current	IB	-	15	-	mA	VCE = 30 V, IC = 150 mA, Tc = 25掳C
Power Dissipation	PD	-	-	1000	mW	Tc = 25掳C
Storage Temperature Range	Tstg	-55	-	150	掳C	-
Operating Temperature Range	Toper	-55	-	150	掳C	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within safe limits.
   • Use recommended mounting torque to avoid damage.

2. Biasing:

   • Apply the base current (IB) to control the collector current (IC).
   • Ensure that the base-emitter voltage (VBE) does not exceed the maximum rating.

3. Power Dissipation:

   • Calculate the power dissipation (PD) as ( P_D = I_C times V_ ).
   • Use appropriate heat sinks or cooling methods to keep the device within its thermal limits.

4. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (VCEO), emitter-collector voltage (VECEO), or collector-base voltage (VCBO).

5. Temperature Considerations:

   • Operate the device within the specified operating temperature range to ensure reliable performance.
   • Store the device within the storage temperature range to prevent damage.

6. Handling:

   • Handle the device with care to avoid mechanical stress.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.

7. Testing:

   • Use appropriate test equipment and procedures to verify the device parameters.
   • Refer to the datasheet for detailed testing conditions and procedures.

(For reference only)