Details

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BUY IRG8P25N120KD https://www.utsource.net/itm/p/12607740.html

Parameter	Symbol	Value	Unit	Conditions/Notes
Maximum Drain Voltage	VDSS	1200	V	Max. drain-to-source voltage
Maximum Gate-Source Voltage	VGS	卤20	V	Max. gate-to-source voltage
Maximum Drain Current (Pulsed)	ID	38	A	Pulse condition, Tc = 25掳C
Maximum Drain Current (Continuous)	ID	8	A	Continuous condition, Tc = 25掳C
Total Power Dissipation	PD	140	W	Case temperature = 25掳C
Junction Temperature	TJ	-55 to 175	掳C	Operating junction temperature range
Storage Temperature	TSTG	-55 to 150	掳C	Storage and handling temperature range
Gate Charge	Qg	196	nC	At VDS = 500V, ID = 12A
Input Capacitance	Ciss	4460	pF	At VDS = 30V, f = 1MHz
Output Capacitance	Coff	1020	pF	At VDS = 30V, f = 1MHz
Reverse Transfer Capacitance	Crss	870	pF	At VDS = 30V, f = 1MHz

Instructions for Use:

1. Handling Precautions: The IRG8P25N120KD is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking to manage the power dissipation within limits. The device can dissipate up to 140W at a case temperature of 25掳C.
3. Voltage Limits: Do not exceed the maximum drain-source voltage (VDSS) of 1200V or the gate-source voltage (VGS) of 卤20V to prevent damage.
4. Current Ratings: Observe the pulsed and continuous drain current ratings (ID) to avoid overheating or failure. Pulsed current should not exceed 38A, and continuous current should not exceed 8A at a case temperature of 25掳C.
5. Operating Temperature: Keep the junction temperature between -55掳C and 175掳C for reliable operation.
6. Storage Conditions: Store in a controlled environment where temperatures range from -55掳C to 150掳C.
7. Capacitance Considerations: Be aware of the input (Ciss), output (Coff), and reverse transfer capacitances (Crss) for circuit design considerations, especially in high-frequency applications.

Ensure all specifications are met for optimal performance and reliability.

(For reference only)