Details

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BUY 2SD970 https://www.utsource.net/itm/p/12607741.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCE	-	-	60	V	Maximum voltage between collector and emitter with base open
Emitter-Base Voltage	VEB	-6	-	-1	V	Maximum reverse voltage between emitter and base
Collector-Base Voltage	VCB	-	-	50	V	Maximum voltage between collector and base with emitter open
Continuous Collector Current	IC	-	1.5	3	A	Maximum continuous current through the collector
Pulse Collector Current	IC(P)	-	4.5	6	A	Maximum pulse current through the collector (t < 300 渭s)
Power Dissipation	PT	-	-	65	W	Maximum power dissipation at TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C	Maximum junction temperature
Storage Temperature Range	TSTG	-55	-	150	掳C	Temperature range for storage and operation

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed to prevent damage to the transistor.
   • Use appropriate heat sinks if operating near the maximum power dissipation.

2. Mounting:

   • Ensure proper thermal management to keep the junction temperature within safe limits.
   • Use insulated mounting hardware if the transistor case is electrically connected to the circuit.

3. Biasing:

   • Ensure the base-emitter voltage (V_BE) is within the specified range to avoid forward biasing the base-emitter junction beyond its maximum rating.

4. Operation:

   • Operate the transistor within its safe operating area (SOA) to ensure reliable performance and longevity.
   • Check the datasheet for detailed SOA graphs and curves.

5. Storage:

   • Store the transistor in a dry, cool environment within the specified storage temperature range to maintain reliability.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
   • Perform initial tests at low currents and voltages to avoid accidental damage.

(For reference only)