Details

---

BUY STGP20H60F https://www.utsource.net/itm/p/12607776.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	600	V
Collector Current	I C	-	-	20	A
Collector Dissipation	P C	-	-	150	W
Junction Temperature	T J	-20	-	150	掳C
Storage Temperature	T STG	-40	-	150	掳C
Gate Threshold Voltage	V GS(th)	2	4	6	V	I D = 1 mA
Input Capacitance	C ISS	-	1800	-	pF	V DS = 0 V

Instructions for Use:

1. Installation:

   • Ensure that the device is mounted on a suitable heatsink to maintain junction temperature within specified limits.
   • Avoid mechanical stress on the leads during installation.

2. Electrical Connections:

   • Connect the gate terminal carefully to avoid excessive voltage, which can damage the gate oxide.
   • Keep wiring as short as possible to minimize inductive effects and noise pickup.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Ensure that the operating temperature remains within the specified range to prevent thermal runaway.

4. Handling Precautions:

   • Handle with care to avoid static discharge; use proper ESD protection.
   • Store in a dry place away from direct sunlight and corrosive materials.

5. Testing:

   • Perform initial testing at reduced power levels to ensure correct operation before full-power tests.
   • Regularly check connections and mounting to ensure reliability over time.

For detailed application notes and more specific guidelines, refer to the datasheet provided by STMicroelectronics.

(For reference only)