Details

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BUY ON946 https://www.utsource.net/itm/p/12607785.html

Parameter	Symbol	Min	Typ	Max	Unit
Supply Voltage	VCC	2.0	-	5.5	V
Continuous Drain Current	ID	-	100	-	mA
Peak Pulse Current	IDM	-	300	-	mA (t ≤ 1 ms)
Gate-Source Voltage	VGS	-10	-	10	V
Drain-Source Breakdown Voltage	VDS(BR)	-	-	30	V
Gate-Source Leakage Current	IGS	-	-	100	nA (VGS = ±10V, TA = 25°C)
Drain-Source On-State Resistance	RDS(on)	-	0.7	-	Ω (VGS = 4.5V, ID = 100mA)
Total Power Dissipation	PTOT	-	-	320	mW (TA = 25°C)
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the range of 2.0V to 5.5V to avoid damage to the device.

2. Continuous Drain Current (I_D):

   • The continuous drain current should not exceed 100mA to prevent overheating and potential failure.

3. Peak Pulse Current (I_DM):

   • The peak pulse current can go up to 300mA for pulses lasting no longer than 1ms. Exceeding this limit can cause permanent damage.

4. Gate-Source Voltage (V_GS):

   • The gate-source voltage should be kept between -10V and 10V to ensure proper operation and prevent gate oxide breakdown.

5. Drain-Source Breakdown Voltage (V_DS(BR)):

   • The maximum drain-source voltage should not exceed 30V to avoid breakdown and damage to the device.

6. Gate-Source Leakage Current (I_GS):

   • The gate-source leakage current should be monitored to ensure it does not exceed 100nA at room temperature.

7. Drain-Source On-State Resistance (R_DS(on)):

   • The on-state resistance is typically 0.7Ω when V_GS is 4.5V and I_D is 100mA. This value can affect power dissipation and efficiency.

8. Total Power Dissipation (P_TOT):

   • The total power dissipation should not exceed 320mW at room temperature to prevent thermal runaway.

9. Junction Temperature (T_J):

   • The junction temperature should be kept below 150°C to ensure reliable operation and longevity.

10. Storage Temperature (T_STG):

    • Store the device in an environment where the temperature ranges from -55°C to 150°C to maintain its performance and reliability.

Additional Notes:

• Always refer to the specific application notes and datasheets provided by the manufacturer for detailed information and recommended practices.
• Ensure proper heat sinking if the device is expected to operate near its maximum power dissipation limits.
• Use appropriate protection circuits to safeguard against overvoltage and overcurrent conditions.

(For reference only)